Links to spice device models
|The Berkeley's Device Group in the EECS department. This is the home of the BSIM group
who develops the BSIM and BSIM SOI compact models. The currently
availabler models are BSIM3, BSIM4, BSIM6, BSIMSOI and BSIMCMG models.
of the Enz-Krummenacher-Vittoz MOSFET compact model. The model is
hosted at the EPFL (Lusanne Polytechnic). EKV version 2.6 and 3 code is
available upon request.
stands for HIgh CUrrent Model. It is a compact model for bipolar
devices. It is suitable for designing high-frequency and high-current
densities circuits in Si, SiGe anf III-V.
|The HiSIM (Hiroshima-University
STARC IGFET Model) is a family of compact models for intrgrated devices
with a MOSFET core. HiSIM models are based on a complete surface
|Large-signal MESFET model. It describes subthreshold conduction and breakdown. Developed at Macquarie University.
model is an advanced MOSFET model developed merging the SP model
(developed at Penn-State) anf the MM11 model (developed by Philips
Research), both based on surface potential. Development is now carried
on at Arizona-State.
University of Florida MOSFET compact model. The UFSOI models (UFPDB and
FD/SOI) are implemented in a Type-I interface (API), which has been
glued to Spice3.
||Vertical Bipolar Intercompany Model, eventually will replace Spice Gummel-Poon.|
The NXP Simkit
NXP distributes the source code for several models as an archive called "SimKit". The SimKit is a simulator-independent compact transistor model library.
The Predictive Technology Models
Arizona State University hosts the PTM web site. PTM stands for Predictive Technology Model, and is a collection of models for deep submicron technologies that can be used with ngspice when foundry models are not avaialable.